Ultra-high pressure annealing of Mn-implanted HVPE-GaN - raw data

This dataset contains the raw data used for the publication titled "Ultra-high pressure annealing of Mn-implanted HVPE-GaN". The following paragraphs contain: list of equipment used for data acquisition, abbreviations used in the article and the publication's abstract.1) List of Equipment:CAMECA IMS6F microanalyzerPhilips X′pert Pro diffractometer with an Empyrean Cu LFF HR (9430 033 7310x) DK33 source and a Xe proportional detector.Custom-built Ultra-high Pressure reactor2) Abbreviations:Mn - ManganeseSi - SiliconO - OxygenEr - ErbiumEu - EuropiumGaN - Gallium nitrideSiC - silicon carbideHEMT - High Electron Mobility TransistorSI - semi-insulating (i.e. exhibiting high resistivity)UHPA - Ultra-high pressure annealingHVPE - Halide Vapor Phase EpitaxySIMS - Secondary Ion Mass SpectrometryXRD - X-ray diffraction/diffractometrySRIM - Stopping and Range of Ions in Matter (software)3) Abstract:Manganese diffusion in ion implanted gallium nitride crystals was investigated. The ions were implanted into a sample composed of a GaN layer grown using halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. The sample was polished into an atomically flat state prior to the implantation. Manganese ions were implanted into the surface of a (0001) plane (also known as the c-plane) using the beam energy of 230 keV and ion fluence of 5E15 cm 2. The beam was tilted relative to the sample’s normal to prevent channeling. After the implantation, ultra-high pressure annealing method was used to both, remove the post-implantation damage and induce the diffusion of implanted Mn ions. Manganese profiles were analyzed along the c-direction using sec- ondary ion mass spectrometry after 5 and 30 h of annealing in temperatures ranging from 1473 K to 1753 K. Two diffusion mechanisms were observed. The diffusion parameters, activation energy and temperature-independent diffusion coefficients, are presented for each mechanism. Additionally, the structural quality of the samples is assessed after 5 and 30-hour annealing in the aforementioned temperature range through the means of X-ray diffractometry.

本数据集包含发表于题为“Mn注入HVPE-氮化镓的超高压退火”的学术论文所用的原始实验数据。下文涵盖数据采集所用设备清单、论文中使用的缩写术语以及论文摘要。
1) 设备清单：CAMECA IMS6F型微分析仪；配备Empyrean Cu LFF HR（9430 033 7310x）DK33源与Xe比例探测器的Philips X′pert Pro衍射仪；定制超高压反应腔。
2) 缩写术语：
Mn - 锰(Manganese)
Si - 硅(Silicon)
O - 氧(Oxygen)
Er - 铒(Erbium)
Eu - 铕(Europium)
GaN - 氮化镓(Gallium nitride)
SiC - 碳化硅(silicon carbide)
HEMT - 高电子迁移率晶体管(High Electron Mobility Transistor)
SI - 半绝缘（即具备高电阻率特性）(semi-insulating (i.e. exhibiting high resistivity))
UHPA - 超高压退火(Ultra-high pressure annealing)
HVPE - 氢化物气相外延(Halide Vapor Phase Epitaxy)
SIMS - 二次离子质谱(Secondary Ion Mass Spectrometry)
XRD - X射线衍射/衍射术(X-ray diffraction/diffractometry)
SRIM - 离子在物质中的阻止与射程(Stopping and Range of Ions in Matter，软件)
3) 摘要：本研究针对离子注入氮化镓(Gallium nitride)晶体中的锰扩散行为展开探究。实验将离子注入至采用氢化物气相外延(Halide Vapor Phase Epitaxy)法在氨热法氮化镓衬底上生长的氮化镓层样品中，样品在注入前经抛光处理至原子级平整表面。以230 keV的束流能量与5×10¹⁵ cm⁻²的离子注量，将锰离子注入至(0001)晶面（亦称为c面）的表面，同时使离子束相对于样品法线倾斜以规避沟道效应。注入完成后，采用超高压退火工艺同时消除注入后损伤并诱导注入锰离子的扩散。在1473 K至1753 K的退火温度区间内，分别对退火5小时与30小时的样品沿c轴方向采用二次离子质谱分析锰的分布剖面。实验观测到两种扩散机制，并给出了每种机制对应的扩散参数：活化能与与温度无关的扩散系数。此外，通过X射线衍射术，对上述温度区间内退火5小时与30小时的样品的结构质量进行了表征评估。