In-situ correlation of the microstructure and electrical properties during polymorphic transitions in an organic semiconductor film

Because the molecular packing has direct impact in the charge carrier mobility of organic field effect transistors (OFETs), identifying the different polymorphs and determining their stability at the interfaces are key factors for device optimization. In this experiment, we aim at providing a link between the crystallographic changes and electrical conductivity evolution by in-situ monitoring the structure by GIWAXS and the electrical current collected OFETs for C8O-BTBT-OC8, a model system for understanding and controlling polymorphism in devices. This experiment will advance our understanding on the role of interfaces and the kinetic factors affecting the stability of each polymorph.

分子堆积对有机场效应晶体管（Organic Field-Effect Transistors, OFETs）的载流子迁移率具有直接影响，因此识别不同晶型并确定其在界面处的稳定性，是器件优化的关键因素。本实验以C8O-BTBT-OC8——一种用于理解与调控器件中晶型行为的模型体系——为研究对象，旨在通过掠入射广角X射线散射（Grazing Incidence Wide-Angle X-ray Scattering, GIWAXS）原位表征晶体结构，并采集该体系有机场效应晶体管的电流信号，建立晶体学变化与电导率演化之间的关联。本实验将深化我们对界面作用以及影响各晶型稳定性的动力学因素的认知。