Data for: "Quantification of trace-level silicon doping in AlxGa1–xN films using wavelength-dispersive X-ray microanalysis"

This data is the result of Wavelength dispersive X-ray (WDX) spectroscopy data used to measure silicon atom concentrations in doped AlxGa1–xN films using an electron probe microanalyser also equipped with a cathodoluminescence (CL) spectrometer. This new approach, using a method combining data derived from SIMS measurements on both GaN and AlxGa1–xN samples. Further analysis and interpretation of this data is presented in the associated journal article, and figure numbers referred to in the data correspond to those used in this paper: Quantification of trace-level silicon doping in AlxGa1–xN films using wavelength-dispersive X-ray microanalysis, DOI 10.1017/S1431927621000568, Microscopy and Microanalysis

本数据集为采用波长色散X射线（WDX）光谱法获取的测试结果，该方法借助配备阴极发光（CL）光谱仪的电子探针显微分析仪，对掺杂型AlₓGa₁₋ₓN薄膜中的硅原子浓度开展定量测量。本次研究采用的新颖方法，结合了针对氮化镓（GaN）与AlₓGa₁₋ₓN样品的二次离子质谱（Secondary Ion Mass Spectrometry，SIMS）测量所得数据。本数据集的进一步分析与解读详见相关学术期刊论文，数据中提及的图号与该论文所用图号完全一致：论文题为《Quantification of trace-level silicon doping in AlₓGa₁₋ₓN films using wavelength-dispersive X-ray microanalysis》，DOI为10.1017/S1431927621000568，发表于《Microscopy and Microanalysis》期刊。