Electrical and optical characteristics for the ultra-thin InGaN LED obtained before and after transfer

The structures are grown on a heavily doped n-type sacrificial underlayer, realized through plasma-assisted molecular beam epitaxy. Fully processed LEDs are undercut using electrochemical etching to selectively remove the underlayer, resulting in a thin-film structure. A transfer using a micromanipulator and microtransfer printing setup was conducted.Data contains:Optical and electrical characteristics for the ultra-thin LED obtained before (on wafer) and after transfer using a micromanipulator.Electrical characteristics for the ultra-thin LED after the micro-transfer printing.

本研究中的结构生长于重掺杂n型牺牲底层之上，该牺牲底层通过等离子体辅助分子束外延（plasma-assisted molecular beam epitaxy）工艺制备而成。采用电化学刻蚀（electrochemical etching）工艺对完成全制程的发光二极管（LED）进行底切处理，以选择性移除该牺牲底层，最终得到薄膜结构。随后借助微操作器与微转印装置完成了转印操作。本数据集涵盖以下两类数据：一是超薄发光二极管在晶圆原位制备阶段以及经微操作器转印后的光学与电学特性数据；二是超薄发光二极管经微转印工艺后的电学特性数据。