Bulk Single Crystals of CdGeAs2 for Disorder Scattering-induced NLHE Study

This data package contains information on the growth conditions and characterization results of CdGeAs₂ bulk single crystals used in the study of the disorder scattering-induced nonlinear Hall effect.

The CdGeAs₂ bulk single crystals were grown using the Bi-flux method at the NSF 2D Crystal Consortium facility. The package includes growth recipe files, as well as SEM, EDX, XRD, transport, and nonlinear transport data. All raw data presented in the corresponding publication are also included.