Comparing contact resistance of edge, top, and hybrid contacted two-dimensional materials

We theoretically investigate the performance and scalability of edge, top, and hybrid contacts to MoS2 monolayers. We compare the contact resistance for different contact geometries while analyzing the impact of parameters such as doping concentration, surrounding dielectrics, metal work functions, van-der-Waals gap thickness, and contact length. Our model uses a quantum transport approach including important mechanisms such as image-force barrier lowering to model the barriers in different geometries.