Data from: Non-injection synthesis of doped zinc oxide plasmonic nanocrystals

Attached file provides supplementary data for linked article. Plasmonic metal oxide nanocrystals bridge the optoelectronic gap between semiconductors and metals. In this study, we report a facile, non-injection synthesis of ZnO nanocrystals doped with Al, Ga, or In. The reaction readily permits dopant/zinc atomic ratios of over 15%, is amenable to high precursor concentrations (0.2 M and greater), and provides high reaction yields (>90%). The resulting colloidal dispersions exhibit high transparency in the visible spectrum and a wavelength-tunable infrared absorption, which arises from a dopant-induced surface plasmon resonance. Through a detailed investigation of reaction parameters, the reaction mechanism is fully characterized and correlated to the optical properties of the synthesized nanocrystals. The distinctive optical features of these doped nanocrystals are shown to be readily harnessed within thin films that are suitable for optoelectronic applications.附件文件为关联文章提供补充数据集。 等离子体金属氧化物纳米晶可弥合半导体与金属之间的光电子学鸿沟。本研究报道了一种简便的无注入合成策略，用于制备掺铝（Al）、镓（Ga）或铟（In）的氧化锌（ZnO）纳米晶。该合成体系可轻松实现掺杂剂与锌的原子比超过15%，适配高前驱体浓度（0.2 M及以上），且反应产率超过90%。所得胶体分散液在可见光波段具备高透明度，同时呈现波长可调的红外吸收特性，该特性源于掺杂剂诱导的表面等离子体共振（Surface Plasmon Resonance）。通过对反应参数的系统研究，本研究完整表征了反应机理，并将其与合成纳米晶的光学特性建立了明确关联。实验证实，这类掺杂纳米晶的独特光学特性可便捷地应用于适配光电子学应用的薄膜体系中。