Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD: data

In order to quantify and verify the quality of the growth of the Type-II superlattice X-ray diffraction (XRD) was used. The peaks in the XRD data correspond to different atomic spacings within the structure. From this it is possible to quantify exactly what was grown in terms of both composition and layer thickness. The XRD data is in .X01 format and can be opened with the open source X'Pert Epitaxy to view the peaks. Fourier transform infrared spectroscopy was used to characterise the photoluminescence (PL) performance of the T2SL from 77 K to 300 K as shown in Fig. 5a. A 671 nm Diode-Pumped Solid State (DPSS) laser was used to pump the sample to acquire PL. The PL data is presented as an .xlsx file with the first column corresponding to the wavelength and each column after that corresponding to a different temperature. The width of the peaks is a good indicator to the quality of the sample.

为量化并验证Ⅱ型超晶格（Type-II superlattice）的生长质量，本研究采用X射线衍射（X-ray diffraction, XRD）技术。XRD数据中的衍射峰对应材料结构内的不同原子面间距，借此可精准量化所得生长样品的组分与层厚。本数据集的XRD数据采用.X01格式存储，可通过开源软件X'Pert Epitaxy打开以查看衍射峰。研究采用傅里叶变换红外光谱（Fourier transform infrared spectroscopy）对Ⅱ型超晶格的光致发光（photoluminescence, PL）性能进行表征，测试温度范围为77 K至300 K，具体结果如图5a所示。实验采用671 nm二极管泵浦固体激光器（Diode-Pumped Solid State, DPSS）对样品进行泵浦以获取PL信号。PL数据以.xlsx格式存储，首列对应波长，其后各列分别对应不同测试温度。衍射峰的宽度可作为评判样品生长质量的良好指标。