Kinetics of H/He nanobubble formation in Si implanted wafer by XPCS

We propose XPCS measurements (transmission geometry) of the atomic diffusion and gas coalescence of H/He implantation in Si to gain insights into the kinetics of the first step of the SmartCutTM process. A study of the characteristic times/activation energies of nanocavities as a function of implantation conditions (H/He ratio and quantities) will be performed to understand these first evolution mechanisms that cannot be obtained by other techniques. Two types of samples will be measured: single implanted wafers and implanted wafer bonded on SiO2/Si to understand the role of a stressor on the bubble and crack formation.