Spot Profile Analysis Low Energy Electron Diffraction of Plasma-Enhanced Chemical Vapor Deposition Grown Epitaxial Few-Layer Graphene on Sapphire

SPA-LEED and Raman data of PECVD grown graphene on Al2O3. The samples were degassed in UHV (as-grown, 30WA00XX series) and then annealed at 840 °C (30WA50XX series) and 960 °C (30WB75XX series). The instrumental response function of the SPA-LEED was measured from a carbonized Al2O3(0001) surface (ST04NXXX series). A Si(111) sample (SI111 series) was used as a reference for distortion correction. Raman Data was despiked, denoised, baseline-corrected and normalized to the D peak intensity in RamanSPy 0.2.10.