Data for RSOS paper: Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown

Figures and raw data for the Royal Society Open Science paper. Data already available on Dryad with a DOI.Abstract: When using avalanche photodiodes (APDs) in applications,
temperature dependence of avalanche breakdown voltage
is one of the performance parameters to be considered.
Hence, novel materials developed for APDs require dedicated
experimental studies. We have carried out such a study on
thin Al1–xGaxAs0.56Sb0.44 p–i–n diode wafers (Ga composition
from 0 to 0.15), plus measurements of avalanche gain and dark
current. Based on data obtained from 77 to 297 K, the alloys
Al1−xGaxAs0.56Sb0.44 exhibited weak temperature dependence
of avalanche gain and breakdown voltage, with temperature
coefficient approximately 0.86–1.08 mV K−1, among the lowest
values reported for a number of semiconductor materials.
Considering no significant tunnelling current was observed at
room temperature at typical operating conditions, the alloys
Al1−xGaxAs0.56Sb0.44 (Ga from 0 to 0.15) are suitable for
InP substrates-based APDs that require excellent temperature
stability without high tunnelling current.

本数据集收录了《皇家学会开放科学》论文中的图表及原始数据。数据已在Dryad平台发布，并配有DOI。摘要：在应用雪崩光电二极管（APD）时，雪崩击穿电压的温度依赖性是需考虑的性能参数之一。因此，为APD开发的创新材料亟需进行专门的实验研究。本研究对薄型Al1–xGaxAs0.56Sb0.44 p–i–n二极管晶圆（Ga组分从0至0.15）进行了研究，并测量了雪崩增益和暗电流。基于77至297 K范围内的数据，合金Al1−xGaxAs0.56Sb0.44表现出微弱的雪崩增益和击穿电压温度依赖性，其温度系数约为0.86–1.08 mV K−1，在众多半导体材料中属于最低值之一。鉴于在典型工作条件下室温下未观察到显著的隧道电流，因此，Ga组分在0至0.15之间的合金Al1−xGaxAs0.56Sb0.44适用于基于InP衬底且需具备卓越温度稳定性且隧道电流较低要求的APD。