用于高速红外探测器的sn催化超高空穴迁移率GaSb纳米线

在纳米线的生长过程中，所使用的金属催化剂会微量的掺杂到纳米线晶体中。受此启发，他们在表面活性剂辅助CVD方法中，采用金属Sn作为纳米线生长的催化剂和轻掺杂源，得到了超高空穴迁移率的GaSb纳米线（空穴迁移率超过1000 cm2 V-1 s-1）。利用接触印刷技术，将超高迁移率GaSb纳米线应用于纳米线阵列红外探测器件，在1550 nm红外光照下进行测试，超高迁移率GaSb纳米线阵列红外探测器件具有61 A·W-1的光响应以及195.1 μs/380.4 μs的上升/下降时间，光生电流超过4 μA，探测率为8 × 107 Jones，光电导增益为49。During the growth of nanowires, the employed metal catalyst will be slightly doped into the nanowire crystals. Inspired by this phenomenon, the researchers adopted tin (Sn) metal as both the catalyst and light doping source for nanowire growth in a surfactant-assisted chemical vapor deposition (CVD) method, and successfully synthesized GaSb nanowires with ultra-high hole mobility exceeding 1000 cm² V⁻¹ s⁻¹. Using contact printing technology, the ultra-high mobility GaSb nanowires were applied to fabricate nanowire array infrared photodetectors, which were tested under 1550 nm infrared illumination. The fabricated devices exhibited a photoresponsivity of 61 A·W⁻¹, a rise time of 195.1 μs and fall time of 380.4 μs, a photogenerated current exceeding 4 μA, a detectivity of 8 × 10⁷ Jones, and a photoconductive gain of 49.

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背景概述

该数据集聚焦于采用Sn催化方法制备的GaSb纳米线，其空穴迁移率超过1000 cm² V⁻¹ s⁻¹，展现出超高性能。这些纳米线被应用于红外探测器件，在1550 nm光照下测试显示高光响应和快速响应时间，适用于高速红外探测应用。数据集由山东大学创建，包含实验数据，格式为Pdf、tiff和csv，数据量为262MB。