Dataset for Nanowire solar cell above the radiative limit

A lossless solar cell operating at the Shockley-Queisser limit generates an open circuit voltage (V_oc) equal to the radiative limit. At V_oc, the highly directional beam of photons from the sun is absorbed and subsequently externally re-emitted into a 4π solid angle, providing a large photon entropy loss. A solar cell can beat the Shockley-Queisser limit and approach the 46.7% ultimate limit by decreasing the output solid angle of the light emission at open circuit conditions. Here, we present a design for an InP single nanowire solar cell capable to operate 159 mV above the radiative limit. We first optimize the spontaneous emission factor (b-factor in the dataset) into a guided mode of the nanowire towards 68%. We subsequently launch a guided mode at the bottom straight part of the tapered nanowire yielding a photon escape probability of 81% for a tapering angle of θ=1.2 degrees and a top facet with a radius of 83 nm (transmission part of the dataset). When assuming homogeneous light emission along the nanowire, an outcoupling efficiency of 42% of the emitted light is obtained. The final optimization is the reduction of the emission cone towards 0.011 sr by focusing the guided mode with an external lens (lens part of the dataset).<br><br>工作在肖克利-奎瑟极限（Shockley-Queisser limit）下的无损耗太阳能电池，其开路电压（V_oc）等于辐射极限。在开路电压条件下，来自太阳的高方向性光子束被吸收，随后以4π立体角向外重新发射，由此产生显著的光子熵损失。通过降低开路条件下光发射的输出立体角，太阳能电池可以突破肖克利-奎瑟极限，逼近46.7%的终极效率极限。 本研究提出一种磷化铟（InP）单纳米线太阳能电池的设计方案，该器件可在比辐射极限高159 mV的条件下工作。我们首先将自发发射因子（数据集中标记为b-factor）优化至纳米线导模的68%。随后，我们在锥形纳米线的底部直段耦合导模，当锥角θ=1.2°、顶面半径为83 nm时，可获得81%的光子逃逸概率（对应数据集的透射部分）。若假设沿纳米线的光发射为均匀分布，则可实现42%的发射光出耦效率。最终优化环节为：通过外置透镜将导模聚焦，将发射锥的立体角压缩至0.011 sr（对应数据集的透镜部分）

搜集汇总

背景与挑战

背景概述

该数据集提供了用于支持InP单纳米线太阳能电池设计的数据，该设计能够超越Shockley-Queisser极限，实现高于辐射极限159 mV的开路电压。数据集包含优化自发发射因子、光子逃逸概率和外部透镜聚焦等关键参数，涉及凝聚态物理、光学物理和可再生能源领域，由荷兰科学研究组织资助，于2021年发布。