Data from: Tungsten oxide adhesion layer for low resistance hole contacts to Wse2

The dangling bond-free surfaces of transition metal dichalcogenides (TMDs)
fundamentally challenge the creation of strongly bonded metal contacts.
Commonly used interfacial adhesion layers, such as titanium have
unfavorable band alignment to the valence band of TMDs. Here, we introduce
tungsten oxide (WOx) as an interfacial adhesion layer for low-resistance
hole contacts on monolayer WSe2. We show that the WOx adhesion layer
exhibits a two-fold increase in adhesion force on both WSe2 and SiO2
surfaces compared to the conventional titanium adhesion layer while
enabling a low hole contact resistance of Rc = 0.2 kΩ⋅μm on monolayer
WSe2. This work provides a way to facilitate a robust and reliable way to
create highly adhesive contacts on atomically smooth TMD surfaces suitable
for large-scale integration.