Completely Annealing-Free Flexible Perovskite Quantum Dot Solar Cells Employing UV-Sintered Ga-Doped SnO2 Electron Transport Layers.xlsx

<b>Fig. 1: Crystallographic and chemical properties of each SnO</b>_{<strong>2</strong>}<b> film</b><b>a</b><b>−c</b> GIWAXS patterns for SnO₂ NP, SnO₂ CNR, and Ga:SnO₂ CNR films, respectively. <b>d</b> XPS core level spectra of Ga 2p and Sn 3d for each SnO₂ film. <b>e </b>Deconvoluted XPS O 1s spectra of each SnO₂ film. <b>f</b> HR-TEM image and schematic representation of Ga:SnO₂ CNR morphology and chemical structure.<br><b>Fig. 2: Charge transport property from CsPbI</b>_{<strong>3</strong>}<b>-PQD to customized SnO</b>_{<strong>2</strong>}<b>.</b><b>a</b> <i>J</i>−<i>V</i> characteristics and calculated conductivity for each SnO₂-based device. <b>b</b> Energy band diagrams for the configurations of the CsPbI₃-PQD solar cell. <b>c</b> Mott–Schottky plots of CsPbI₃-PQD solar cell with each SnO₂ ETL. <b>d</b> Steady-state PL spectra of the CsPbI₃-PQD films deposited on each SnO₂ film. <b>e</b> TRPL spectra with excitation wavelength of 463 nm for CsPbI₃-PQD films deposited on each SnO₂ film. <b>f</b> Dark <i>J</i>−<i>V</i> curves of the electron-only devices (ITO/SnO₂/CsPbI₃-PQD/PCBM/Au) with V_TFL kink points.<br><b>Fig. 3: CsPbI</b>_{<strong>3</strong>}<b>-PQD solar cell performance using each SnO</b>_{<strong>2</strong>}<b> as ETL.</b><b>a</b> Schematic illustration representing the UV sintering process for formation of SnO₂ CNR thin film and fabrication method for CsPbI₃-PQD solar cells. <b>b</b> <i>J</i>−<i>V</i> characteristics of best-performing CsPbI₃-PQD solar cells using various SnO₂ as ETL (inset: device configuration measured by SEM). <b>c</b> IPCE spectra of CsPbI₃-PQD solar cells with SnO₂ ETLs and integrated <i>J</i>_SC calculated from IPCE. <b>d</b> Normalized <i>PCE</i> obtained by stability tests of each SnO₂-based device under ambient condition (25℃, 20% RH) for 10 days (inset: XRD data of the CsPbI₃-PQD film exfoliated from each SnO₂after 1 day and 7 days, respectively).<b>Fig. 4: Characterizations of each SnO</b>_{<strong>2</strong>}<b> ETL-based flexible CsPbI</b>_{<strong>3</strong>}<b>-PQD solar cells</b><b>a</b> <i>J</i>−<i>V</i> characteristics of best-performing flexible CsPbI₃-PQD solar cells using various SnO₂ as ETL (inset: photograph of the fabricated flexible solar cell). <b>b</b> <i>In-situ</i> relative resistance change (<i>Δ</i><i>R/R</i>_<em>0</em>) of each SnO₂-based device (ITO/SnO₂/Au) during bending test with 7.5 mm of curvature of radius (<i>R</i>_<em>C</em>) (inset: after recovery from bending at various values of <i>R</i>_<em>C</em>). <b>c</b> Normalized <i>PCE</i> of the flexible CsPbI₃-PQD solar cell after repeated bending at <i>R</i>_{<em>C </em>}= 7.5 mm for 500 bending cycles (inset: top-view SEM image of SnO₂ film on a flexible substrate before and after bending test).<b>Table 1. </b>Photovoltaic parameters of best-performing CsPbI₃-PQD solar cells with various SnO₂ ETLs (SnO₂ NP, SnO₂ CNR, and Ga:SnO₂ CNR) under 1 sun conditions.<b>Table 2.</b> Photovoltaic parameters of best-performing flexible CsPbI₃-PQD solar cells with various SnO₂ ETLs (SnO₂ NP, SnO₂ CNR, and Ga:SnO₂ CNR) under 1 sun conditions.