The transformation of digital to analog resistance switching behavior in Bi₂FeCrO₆ thin films

Bi₂FeCrO₆ (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two types of the resistive switching behaviors, it is found that the digital resistive behavior conductance mechanism is a bulk-limited conduction, and the analog resistive switching behavior is accompanied with rectification effects and negative differential resistance behaviors, which are considered as interface-limited conductivity behaviors. So the change of digital and analog resistive switching behaviors may be result of the transformation of conductive mechanism. These research results will help us to design and manufacture digital and analog multifunctional resistive switching memory devices.Bi₂FeCrO₆（BFCO）薄膜采用溶胶-凝胶法制备。在Au/BFCO/FTO/玻璃结构中，通过施加连续循环电压，可依次观测到数字型与模拟型电阻开关行为。通过对两类电阻开关行为的形成机制进行分析，研究发现：数字型电阻开关行为的电导机制为体限传导（bulk-limited conduction）；模拟型电阻开关行为伴随整流效应与负微分电阻行为，此类行为被归类为界面限域导电机制（interface-limited conductivity）。由此可知，数字型与模拟型电阻开关行为的转变，可能源于导电机制的相互转化。上述研究结果将助力我们设计与制备数字-模拟多功能电阻开关存储器件。