TEM microscopy study of misfit dislocations in InGaN/GaN interface
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https://repod.icm.edu.pl/citation?persistentId=doi:10.18150/X29468
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资源简介：
This dataset contains TEM images of misfit dislocations at the InGaN/GaN interface. The analyzed structure is an epitaxial (0001)-oriented InGaN/GaN heterostructure. The InGaN layers contain 18% indium and have thicknesses in the range of 50–100 nm. Layers of this type relax through the formation of a trigonal network of (a+c)-type (i.e 1/3 <11-23> Burgers vectors) misfit dislocations aligned along the ⟨1-100⟩ crystallographic directions. The dislocations exhibit a half-loop character, consisting of a long misfit segment located at the interface and terminated by threading segments propagating toward the surface.For detailed description please consult readme txt file.
提供机构：
RepOD
创建时间：
2026-02-20
