Molecular Beam Epitaxy Growths of SnSe layers on MgO
收藏DataCite Commons2026-03-16 更新2026-05-05 收录
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https://scholarsphere.psu.edu/resources/c02149de-5cf9-45b7-a678-36a90974275b
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资源简介：
In this work, we demonstrate the growth of SnSe layers on MgO 100 substrate using molecular beam epitaxy (MBE). We obtain pristine quality SnSe ultrathin layers of thicknesses from 20 nm down to 5 nm, with root-mean-square (RMS) roughness as low as 0.6 nm and full-width-at-half-maximum (FWHM) of 0.1° in SnSe (400) x-ray diffraction (XRD) rocking curve.
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scholarsphere
创建时间：
2026-03-16
