Molecular Beam Epitaxy Growths of SnSe layers on MgO
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In this work, we demonstrate the growth of SnSe layers on MgO 100 substrate using molecular beam epitaxy (MBE). We obtain pristine quality SnSe ultrathin layers of thicknesses from 20 nm down to 5 nm, with root-mean-square (RMS) roughness as low as 0.6 nm and full-width-at-half-maximum (FWHM) of 0.1° in SnSe (400) x-ray diffraction (XRD) rocking curve.
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scholarsphere创建时间：
2026-03-16
