仿真平台和数据库构建的方法流程和仿真结果和实验测试数据数据集

使用TCAD软件构建器件仿真模型，仿真平台包含工艺仿真功能与器件仿真功能：器件仿真支持漂移扩散方程、泊松方程，支持不同材料参数及变温、应力、光照等多物理场仿真器件特性；工艺仿真支持曝光、沉积、刻蚀离子注入等工艺参数下器件特性仿真。使用TCAD软件构建器件仿真模型，设置参数，输出器件值后与实验数据进行对准以获得正确的参数值，此后根据实验需要进行器件仿真模型的修改，以获得想要的器件的I-V,C-V数据Device simulation models were constructed using TCAD software, and the adopted simulation platform integrates two core functionalities: process simulation and device simulation. The device simulation module supports drift-diffusion equations and Poisson's equations, enabling the characterization of device behaviors under varied material parameters as well as multiphysics scenarios including temperature variation, stress, and illumination. The process simulation module supports the simulation of device characteristics under process parameters such as exposure, deposition, etching, and ion implantation. Subsequently, device simulation models were built with TCAD software, with parameters configured first. The output device-related values were calibrated against experimental data to derive accurate parameter values. Thereafter, the device simulation models were modified per experimental requirements to generate the desired current-voltage (I-V) and capacitance-voltage (C-V) characteristic data of the target devices.

搜集汇总

背景与挑战

背景概述

该数据集聚焦于仿真平台和数据库构建的方法流程，涵盖仿真结果与实验测试数据。它利用TCAD软件建立器件仿真模型，支持工艺仿真和器件仿真功能，通过参数调整和数据对准来优化模型，最终生成器件的I-V和C-V特性数据。数据集应用于集成电路技术等领域，旨在支持器件特性的多物理场仿真与分析。