Dataset for "Overcoming Asymmetric Carrier Injection in III-Nitride Light-Emitting Diodes through Defect Engineering"
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资源简介：
This dataset contains the input and output files used in the calculations of carrier relaxation dynamics in GaN/AlN quantum wells, as presented in the paper "Overcoming Asymmetric Carrier Injection in III-Nitride Light-Emitting Diodes through Defect Engineering". It includes raw simulation inputs.
创建时间：
2025-06-21
