Research data supporting "Point defect luminescence associated with stacking faults in magnesium doped zincblende GaN"

In this dataset cathodoluminescence (CL) spectroscopy and atom probe tomography (APT) have been used to investigate the luminescence characteristics and the relation between the distribution of impurities and stacking faults (SFs) in Mg-doped zincblende gallium nitride (zb-GaN:Mg). Several characteristic peaks have been identified in the CL emission spectra, related to donor-to-acceptor (DAP) transitions involving different Mg acceptor energy levels. These DAP peaks have been used to demonstrate a segregation of Mg close to SFs compared to the surrounding defect-free material, which was also supported by APT measurements. (For more details of the experiment see the related publication.) File: Fig1c)-mean-spectrum File contains a representative mean CL spectrum for the area of the cubic GaN:Mg sample shown in figure 1(a). Files: Fig4-PointSpectrum-point-A to Fig4-PointSpectrum-point-D These files contain point spectra taken from regions away from SFs (A, B) and at SF locations (C, D), as shown in figure 4 of the corresponding publication. File: Fig-5b)-1D-concentration-profile This file contains 1D element concentration profiles taken across a SF in the APT dataset shown in Fig 5 of the corresponding publication.