n‑Type Organic Field-Effect Transistors Based on Bisthienoisatin Derivatives

Bisthienoisatins
(BTI-R with R = n-propyl, n-hexyl, and 2-ethylhexyl) and the dicyanomethylene
derivatives (BTICN-R) are prepared, and the thin-film
transistors are investigated. The crystals have uniform stacking structures,
but the packing pattern of the stacks varies depending on the alkyl
chains. These materials show n-type transistor properties, and BTICNs
exhibit greater performance than BTIs in general. In particular, BTICN-EH
shows the maximum electron mobility exceeding 0.2 cm2 V–1 s–1.