Dataset of "Interfacial nucleation engineering of Sb2S3 for high voltage CdS-free semi-transparent solar cells"

Interfacial recombination and non-uniform nucleation of ultrathin absorbers remain critical bottlenecks limiting the performance of CdS free Sb₂S₃ solar cells, particularly in semi transparent architectures. Here, we report a strategy for interfacial nucleation engineering using an ultrathin ZnO interlayer deposited via ultrasonic spray pyrolysis to control Sb₂S₃ growth on textured TiO₂ substrates. The ZnO modification promotes homogeneous nucleation, enabling conformal, pinhole free Sb₂S₃ films with thicknesses down to 60 nm. Comprehensive electrical and surface analyses reveal reduced trap density, improved charge extraction, and suppressed non radiative recombination at the heterointerface. As a result, cadmium-free devices achieve a power conversion efficiency of 7.8% with a high open circuit voltage over 0.7 V for ~100 nm absorbers. Semi transparent devices exhibit over 50% light utilization efficiency. The enhanced performance originates from improved junction quality and electronic homogeneity rather than changes in built in potential.