Estimation of parasitic elements of silicon photomultipliers (SiPM)

Project FleX-RAY employed photon counting capable photodiodes in order to capture light that was generated by the scintillation phenomenon, in plastic scintillating fibres. These special photodiodes are called Silicon Photomultipliers, or SiPMs. Electrical simulations were then carried out to evaluate different preamplifier architectures for SiPMs. For these simulations, we had to develop the electrical equivalent of an SiPM, however, many parameters that are necessary to develop an accurate model cannot be found in product datasheets or literature. This dataset contains electrical measurements and calculations that were conducted during the project, to estimate the values of various parasitic parameters of SiPMs available in the market.

Specifically, the datasets contain Current vs Voltage (I-V) curves and Capacitance vs Electrical Conductance (Cp-G) curves that were used to extract the following parasitic parameters: quench resistance Rq, paralleled lumped capacitance Cm and conductance Gm. After the value of these parameters had been measured, capacitances Cq, Cd and Cg were mathematically derived.

Two spreadsheets are included in this dataset:

Spreadsheet titled "SiPM_I-V_curves.xlsx" contains measured Current vs Voltage (I-V) data, and derived Rq (quench resistance data), for the devices listed below.

Spreadsheet titled "SiPMs_GvsCp.xls" contains the measured Conductance vs Parallel Capacitance (G-Cp) data, and derived Cq, Cd and Cg capacitance data, for the devices listed below.

Devices under investigation: Hamamatsu SiPM models S12572-010, S12571-015, S13360-3075CS, S13360-3050CS, S13360-1375CS, S13360-1350CS and ON-semi SiPM models microFJ-30035, microFC-10035

Measurement device(s)/board(s): Keysight Technologies 34401A Bench Digital Multimeter, Agilent 4294A Impedance analyzer, Generic bench-top power supplies

This work was financed by the European Union's Horizon 2020 program under grant agreement No. 899634.