Dataset of "Hidden Inhomogeneities: How Local Sulfurization Conditions Affect SnS Thin Film Properties"

Thin SnS films were prepared by sulfurization of vacuum-deposited tin precursors and investigated to establish the influence of sulfurization nonuniformities on their structural and photoelectronic properties. While all films exhibited the characteristic optical response of SnS, including strong absorption and a bandgap of ~1.4 eV, substantial differences emerged in their crystallographic texture despite identical nominal processing conditions. X-ray diffraction revealed pronounced variations in preferential orientation, particularly along the (101) and (111) planes, arising from local differences in temperature and gas-phase transport during sulfurization. Kelvin probe measurements showed a corresponding variation in positive surface photovoltage from 12 to 154 mV, accompanied by distinct photoresponse dynamics. The observed correlation between crystallographic texture and surface photovoltage indicates that local growth conditions strongly affect charge separation and surface electronic behavior in SnS. These results identify sulfurization uniformity as a key parameter governing the functional properties of SnS photovoltaic absorbers and provide practical guidelines for the reproducible fabrication of high-performance chalcogenide thin films.