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高温SOI CMOS器件模型及单元库开发数据集

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国家基础学科公共科学数据中心2026-01-30 收录
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https://nbsdc.cn/general/dataDetail?id=683de8ac195d2612331894d5&type=1
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资源简介:
数据集通过中中央财政专项和自筹等资金,以国家智能传感器领域重大需求为牵引,围绕传感器研发支撑平台这一技术方向,针对高温传感器配套专用集成电路(ASIC)制造的难题,开发一套成熟的耐高温SOI CMOS工艺及相关模型库和单元库,突破的关键技术:(1)高温传感器 ASIC 设计技术,优化电路温度系数;(2)高温 SOI CMOS 制造工艺技术,建立成套工艺及设计服务环境;通过开发自主可控的耐高温SOI CMOS工艺及建立相关的模型库和单元库,为器件批量化生产及智能传感器研发生产提供有力支撑。

This dataset is funded by central government special projects and self-raised funds, driven by major national demands in the field of intelligent sensors. Focusing on the technical direction of sensor R&D support platforms, it targets the challenges in manufacturing application-specific integrated circuits (ASICs) supporting high-temperature sensors. A mature high-temperature-resistant SOI CMOS process and its supporting model library and cell library have been developed, with the breakthrough key technologies as follows: (1) High-temperature sensor ASIC design technology, which optimizes the temperature coefficient of circuits; (2) High-temperature SOI CMOS manufacturing process technology, establishing a complete set of processes and design service environment. By developing independently controllable high-temperature-resistant SOI CMOS process and establishing the corresponding model library and cell library, this dataset provides strong support for batch production of devices and R&D and manufacturing of intelligent sensors.
提供机构:
中国电子科技集团公司第五十八研究所
搜集汇总
数据集介绍
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背景与挑战
背景概述
该数据集聚焦于高温SOI CMOS器件模型及单元库的开发,旨在解决高温传感器专用集成电路(ASIC)制造的难题。它包含耐高温SOI CMOS工艺技术、模型库和单元库,关键技术涉及高温传感器ASIC设计优化和SOI CMOS制造工艺,为智能传感器研发和批量生产提供支撑。数据集由张庆东等人创建,数据量为49.12MB,包含8个文件,属于半导体技术和集成电路学科领域。
以上内容由遇见数据集搜集并总结生成
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