Quasi-non-volatile capacitorless DRAM based on ultra-low leakage edge contact MoS2 transistor
收藏DataCite Commons2026-01-15 更新2026-04-25 收录
下载链接：
https://springernature.figshare.com/articles/dataset/Quasi-non-volatile_capacitorless_DRAM_based_on_ultra-low_leakage_edge_contact_MoS2_transistor/30818588
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资源简介：
This dataset supports the research on edge-contact (EC) two-dimensional semiconductors (2DSCs) for post-Moore era applications, as reported in the associated research article. The data correspond to the performance characterization of molybdenum disulfide (MoS2)-based field-effect transistors (FETs) and capacitorless two-transistor (2T0C) DRAM devices, fabricated via an in-situ multi-step process.
提供机构：
figshare
创建时间：
2025-12-08
