Layer-controlled fractal growth of vanadium-doped molybdenum disulfide

Vanadium doping can effectively modify the physical properties of transition metal dichalcogenides (TMDCs), broadening their application prospect in electronic, spintronic, and valleytronic devices. However, vanadium dopants always suppress the growth of TMDCs and lower the growth controllability. Here, we report the morphology-controlled growth of vanadium-doped MoS₂ (V-MoS₂). Both the layer-controlled growth and fractal growth of monolayer V-MoS₂ were realized, and the mechanism was analyzed, including contributions from the localized concentration of Mo atoms, the etching effect, and formation energies of different terminations. It will shed light on the morphology-controlled growth of other vanadium-doped TMDCs, promoting the construction of novel devices. Controll vanadium dopants enables layer-controlled and fractal growth of V-MoS2 in this work with contributions from the localized concentration of Mo atoms, the etching effect, and formation energies of different terminations. It will help to realize the morphology-controlled growth of other vanadium-doped TMDCs and thus promotes the construction of novel devices.