New Chet

<p>The high pressure thermal evaporation system is designed for synthesizing 2D metals and alloys via confinement heteroexpitaxy (CHet). The substrates, whose size ranges from 5 mm square to 100 mm wafer, can be heated via a graphite heating element up to 1000 ? and keep continuous and automatic rotation with a rate from 1 to 30 RPM during the process. A root pump, together with a turbo pump, are employed for chamber evacuation and the base pressure is able to reach below 5<em>&#215;</em>10^-7 Torr for dry and clean chamber. Butterfly valve and full-scale capacitance manometer are utilized for closed-loop process pressure control and the operation pressure can reach up to 20 Torr.&nbsp; Three thermal evaporation sources can be mounted in the chamber and be heated separately, allowing synthesis of 2D alloy via CHet. An ion source and a plasma source are integrated into the chamber to generate different types of ions or plasma to generate defects in epitaxial graphene and functionalize graphene. The system also includes N₂, Ar, Ar with 5% H₂ and O₂ gas as processing gas.</p>