TEM microscopy study of misfit dislocations in InGaN/GaN interface

Name: TEM microscopy study of misfit dislocations in InGaN/GaN interface
Creator: Institute of High Pressure Physics
Published: 2026-02-23T11:14:19+08:00

RepOD Repository for Open Data2026-02-23 更新2026-07-23 收录

GaN异质结位错

TEM缺陷表征

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/X29468 数据链接链接失效反馈

官方服务：

资源简介：

Moneta, Joanna, 2026, "TEM microscopy study of misfit dislocations in InGaN/GaN interface", https://doi.org/10.18150/X29468, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2026-02-23

TEM microscopy study of misfit dislocations in InGaN/GaN interface

资源简介：

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