Total Ionizing Dose TCAD simulation of 400 nm SiO2 capacitor
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资源简介：
Synopsys Sentaurus TCAD simulation of 400 nm SiO2 capacitor under gamma irradiation. Dataset supports: Chatzikyriakou, Eleni et al (2017) A systematic method for simulating total ionizing dose effects using the finite elements method. Journal of Computational Electronics. Funded by EPSRC award 1304067.
创建时间：
2017-07-06
