Replication Data for “Ionic control of magnetism in all-solid-state CoOx/yttria-stabilized zirconia heterostructures”

This dataset contains the information on our recent body of work on the study of magneto-ionic properties in all-solid-state CoOx/yttria-stabilized zirconia heterostructures and all the relevant data files. Magneto-ionics, an emerging approach to manipulate magnetism that relies on voltage-driven ion motion, holds the promise to boost energy efficiency in information technologies such as spintronic devices or future non-von Neumann computing architectures. Most previous studies in all-solid-state magneto-ionic systems have focused on the control of interfacial magnetism of ultrathin (i.e., 1 – 3 nm) magnetic films, taking advantage of an adjacent ionic conducting oxide, usually GdOx or HfOx, that transports functional ionic species (e.g., H+ or O2?). Here, we report on room-temperature OFF-ON ferromagnetism by solid-state magneto-ionics in relatively thick (25 nm) patterned CoOx films grown on an yttria-stabilized zirconia (YSZ) layer, which acts as a dielectric to hold electric field and as an O2? ions reservoir. Upon negatively biasing, O2? ions from the CoOx tend to migrate toward the YSZ gate electrode, leading to the gradual generation of magnetization (i.e., OFF-to-ON switching of a ferromagnetic state). X-ray absorption and magnetic circular dichroism studies reveal subtle changes in the electronic/chemical characteristics, responsible for the induced magnetoelectric effects in such all-oxide heterostructures. Recovery of the initial (virtually non-magnetic) state is achieved by application of positive voltage. The study may guide future development of all-solid-state low-power CMOS-compatible magneto-ionic devices.