Typical Thermal Atomic Layer Etching (ALE) Processes for Representative Materials
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资源简介：
This comparison summarizes the key thermal atomic layer etching (ALE) processes reported for representative materials as presented in “Thermal atomic layer etching: Mechanism, materials and prospects” by Chang Fang, Yanqiang Cao, Di Wu, and Aidong Li https://doi.org/10.1016/j.pnsc.2018.11.003.
It provides an overview of etching parameters—surface reactants, etching precursors, etching per cycle (EPC) values, and etching temperatures—for commonly studied materials such as Al₂O₃, HfO₂, ZrO₂, ZnO, TiO₂, SiO₂, WO₃, W, TiN, AlN, and AlF₃.
The table highlights mechanistic diversity across fluorination, ligand-exchange, and oxidation–fluorination processes and captures how experimental variations (e.g., plasma-assisted steps) influence EPC and etch efficiency.
提供机构：
Open Research Knowledge Graph
创建时间：
2025-11-05
