XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111)

The DataSet contains the XRD patterns of  V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method.  The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate and vanadium thin films were obtained by annealing as-prepared films at 600°C  under synthetic air. 
X-ray diffraction patterns (XRD) were collected on a Philips X’PERT PLUS diffractometer with Cu Ka radiation (1.5406 Å) and ranging from 10 to 80 degrees.