Measurement Data for "Effects of Ionizing Radiation on the EMI-Induced Offset Voltage of Operational Amplifiers"

In this paper, we analyse the impact of ionising radiation on the electromagnetic interference (EMI) robustness of operational amplifiers (OpAmps). Therefore we irradiate two OpAmps, one consisting of a nominal input stage, the other OpAmp featuring a second cross-coupled double differential input pair. We perform measurements on the manufactured test chip structures to determine nominal characteristics (gain, offset, gain-bandwidth product (GBWP) and phase margin), as well as EMI-related characteristics EMI-induced offset and electromagnetic interference rejection ratio (EMIRR)). Based on these characteristics, we compare both structures with regard to their performance prior, during and after irradiation with X-rays. We can observe a degradation of the EMIRR performance with increasing dose for low doses, whereas the susceptibility is improving again for higher doses. We can explain our observations by taking into account transistor-level measurements which are provided by literature.