The reliability of modern microelectronics from mono-energetic neutrons compared to an atmospheric neutron spectra.

The objective of this proposal is to perform a series of Single Event Upsets characterisations for modern microelectronics i.e. commercial SRAM memories with feature sizes <90 nm which are analogous to devices found in a wide range of systems. Previous tests have been carried out on ChipIR during 2020 which has indicated an increased susceptibility to this generation of SRAMs from an atmospheric neutron spectra. These tests also provided micro-latch phenomena which are uncommon and not sufficiently recorded during this type of experiment. There should be a differentiator between lower and higher energy neutrons which will be investigated at the NILE instrument using 2.5 and 14 MeV neutrons. The project outcomes should be able to inform the reliability of the chosen technologies to perform critical functions on large scale systems e.g. mobile phone systems or avionics, satellites etc.