Longitudinal and Hall Resistance of HgTe quantum well as a Function of Temperature, Magnetic field and Gate Voltage

File ExpDataFig1d. This dataset contains measured voltage values (V) for a device under varying temperatures and gate voltages. The current was 10^-7 A. Resistance can be calculated using the formula R=V/R , where R is resistance, V is voltage, and I is current. The data is structured in a CSV file where: The first row lists temperature values (in Kelvin, K ). The first column lists gate voltage values (in Volts, V). The remaining cells represent the corresponding Voltage (V) at each temperature (row header) and gate voltage (column header). File ExpDataFig2. This dataset contains measured voltage values (V) for a device under varying magnetic field and gate voltages. The current was 10^-7 A. Resistance can be calculated using the formula R=V/R , where R is resistance, V is voltage, and I is current. The data is structured in a CSV file where: The first row labels the columns for longitudinal and Hall measurements The third row lists gate voltage values (in Volts, V). The first column lists magnetic field (in Tesla, T). The remaining cells represent the corresponding Voltage (V) at each temperature (row header) and gate voltage (column header). File ExpDataFig3. This dataset contains measured voltage values (V) for a device under varying magnetic field and gate voltages ( Hall effect). The current was 10^-7 A. The Hall resistance can be calculated using the formula R=V/R , where R is resistance, V is voltage, and I is current." The data is structured in a CSV file where: The first row lists magnetic field values (in Tesla, T ). The first column lists gate voltage values (in Volts, V). The remaining cells represent the corresponding Voltage (V) at each magnetic field (row header) and gate voltage (column header). File ExpDataFig4. This dataset contains measured resistivity values (Ohm) for a device under varying gate voltages at B=0 and at B=0.2 T. The data is structured in a CSV file where: The first column lists gate voltage values (in Volts, V). The second column represent the corresponding resitivity (Ohm) at each gate voltage (row header). The third column represent the corresponding Hall resitivity (Ohm) at each gate voltage (row header).