DFXM study of the coalescence of GaN nanopillars grown by Nano-Pendeo Epitaxy

An original method of compliant epitaxy, Nano-Pendeo Epitaxy, has been developed for achieving low dislocation density GaN and managing the strain in the nitride layers. Initial...研究人员开发了一种原创性柔性外延方法——纳米悬挂外延（Nano-Pendeo Epitaxy），该方法可用于制备低位错密度氮化镓（GaN）并调控氮化物层内的应变。初步……