Dynamic range extension for photon counting arrays

This script is a supplement of the paper: I. M. Antolovic, C. Bruschini, and E. Charbon, “Dynamic range extension for photon counting arrays,” Opt. Express, vol. 26, no. 17, p. 22234-22248, Aug. 2018.<br><br>The first three sections output the F factor described in the paper. The fourth section plots the theoretical response, standard deviation and signal-to-noise ratio for the three recharge mechanisms. <br><br>Measured and detected counts are denoted with m and n, respectively, and normalized to 1/Tdead, where Tdead is the dead time of SPAD imagers. When following the Quanta Image Sensor notation, m/Tdead is the bit density D or electrons, and n/Tdead is the exposure H.<br><br>The fifth section verifies the theoretical curves with simulations results, which are plotted in the last section of the script. The fifth section can be also skipped since *.mat simulation data is provided.<br>本脚本为以下论文的补充材料：I. M. Antolovic、C. Bruschini与E. Charbon，《光子计数阵列的动态范围扩展》（Dynamic range extension for photon counting arrays），《光学快报》（Opt. Express），2018年8月，第26卷第17期，第22234-22248页。 本脚本的前三个章节用于输出论文中所述的F因子，第四章节则绘制三种充电机制下的理论响应、标准差与信噪比曲线。 测量计数与探测计数分别记为m与n，并归一化至1/Tdead，其中Tdead为单光子雪崩二极管（Single-Photon Avalanche Diode, SPAD）成像器的死时间。当遵循量子图像传感器（Quanta Image Sensor）的记法时，m/Tdead对应比特密度D或电子数，n/Tdead则对应曝光量H。 第五章节通过仿真结果对理论曲线进行验证，仿真结果将在本脚本的最后一个章节中绘制。由于已提供*.mat格式的仿真数据，第五章节也可跳过。