Low Excess Noise of Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiode from Pure Electron Injection
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https://figshare.shef.ac.uk/articles/dataset/Low_Excess_Noise_of_Al0_85Ga0_15As0_56Sb0_44_Avalanche_Photodiode_from_Pure_Electron_Injection/15082455
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The files correspond to experimental results in paper: <b>Low Excess Noise of Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiode from Pure Electron Injection</b><br>There are two types of files:- .png which correspond to the figures- .csv, which are raw data in figures and tables<br>This work presents gain and excess noise data for Al0.85Ga0.15As0.56Sb0.44 p-i-n with an i-region of 600 nm for pure electron and two mixed injection profiles. <br><br><br><br>J. Taylor-Mew, V. Shulyak, B. White, C. H. Tan and J. S. Ng, "Low Excess Noise of Al<sub>0.85</sub>Ga<sub>0.15</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> Avalanche Photodiode From Pure Electron Injection," in <em>IEEE Photonics Technology Letters</em>, vol. 33, no. 20, pp. 1155-1158, Oct.15, 15 2021, doi: 10.1109/LPT.2021.3110123.<br>
提供机构：
The University of Sheffield
创建时间：
2021-08-25
