Europium diffusion in ammonothermal gallium nitride - Raw Data

This dataset contains the raw data used for the publication titled "Europium diffusion in ammonothermal gallium nitride". The following paragraphs contain: list of equipment used for data acquisition, abbreviations used in the article and the publication's abstract.1) List of Equipment:CAMECA IMS6F microanalyzerDiode Pulse Solid State Laser (Lasos)Nanoscope Dimension 3100 in a semi-contact (tapping) mode with a standard silicon tip.Horiba Jobin Yvon T6400 spectrometerEmpyrean X-ray diffractometer operating at the Cu Kα1 wavelength. The diffractometer was equipped with a hybrid 2 bounce monochromator and a threefold Ge (2 2 0) analyzer.Custom-built Ultra-high Pressure reactor2) Abbreviations:O - OxygenEr - ErbiumEu - EuropiumGaN - Gallium nitrideUHPA - Ultra-high pressure annealingHVPE - Halide Vapor Phase EpitaxySIMS - Secondary Ion Mass SpectrometryXRD - X-ray diffraction/diffractometryAFM - Atomic Force MicroscopyPL - PhotoluminescenceSRIM - Stopping and Range of Ions in Matter (software)3) Abstract:Europium doping of gallium nitride using a novel ultra-high pressure annealing method was investigated. Ammonothermal gallium nitride substrates (n-type) were used as europium ion implantation targets using beam energy of 490 keV and ion fluences ranging from 1 × 1015 to 1 × 1016 Eu/cm2. The implanted samples were annealed at temperatures between 1473 K and 1753 K in high nitrogen pressure. Europium concentration profiles were analyzed along the [0001] crystallographic direction. The morphology and structural quality of implanted and annealed samples were examined. The “out-diffusion” phenomenon was noted. The presence of optically active EuGa-X defect complexes was suggested based on the analysis of photoluminescence spectra measured at low temperature (20 K). Limitations of diffusion-based europium doping of ammonothermal gallium nitride are discussed.