Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structure

This dataset contains the results of scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) Energy Dispersive X-ray (EDX) and Catodoluminescence (CL) measurements carried out on InGaN/GaN core-shell nanostructures. The samples are highly regular arrays of GaN etched cores onto which various InGaN layer thickness were grown using fixed metal organic vapour phase epitaxy (MOVPE) growth conditions. Three different growth time were used to grow InGaN layer with various thickness: 2min, 6min, and 18min, either with or without a GaN capping layer. SEM and AFM characterization techniques were used to assess the nanorod morphology and roughness of the lateral m-plane facets. TEM were used to investigate the structural properties and assess the InGaN thickness of the m-plane facets. EDX measurements were used to assess the InGaN layer composition of the m-plane facet. CL were used to assess the optical properties of each InGaN layer thickness. Correlation of SEM, AFM, TEM, EDX and CL allow to describe the and explain the growth mechanism of a thick InGaN shell grown on GaN NRs formed by combined top-down etching and regrowth.

本数据集收录了针对InGaN/GaN核壳纳米结构进行的扫描电子显微镜（SEM）、原子力显微镜（AFM）、透射电子显微镜（TEM）、能谱仪（EDX）以及阴极发光（CL）测量结果。样本为高度规则的GaN刻蚀核心阵列，其上通过固定金属有机气相外延（MOVPE）生长条件，生长了不同厚度的InGaN层。采用了三种不同的生长时间以生长具有不同厚度的InGaN层：2分钟、6分钟和18分钟，并在有无GaN顶封层的情况下进行。通过SEM和AFM表征技术评估了侧向m面面的纳米棒形貌和粗糙度。TEM用于研究结构特性并评估m面面的InGaN厚度。EDX测量用于评估m面面的InGaN层组成。CL用于评估各个InGaN层厚度的光学性质。SEM、AFM、TEM、EDX和CL之间的相关性，有助于描述并解释在由上至下刻蚀与再生长相结合形成的GaN纳米棒上生长的厚InGaN壳层的生长机制。