X-ray Diffraction Data for 3C-SiC/Si Heterostructures with and without Porous Silicon Buffer Layer

This dataset contains X-ray diffraction (XRD) data acquired for cubic silicon carbide (3C-SiC) thin films heteroepitaxially grown on silicon substrates, with and without an intermediate porous silicon (por-Si) buffer layer. The data were collected to characterize the crystal structure, peak broadening, and residual lattice strain in 3C-SiC/Si heterostructures and to enable a comparative assessment of stress relaxation induced by a compliant porous silicon interlayer. Two sample series are included: S-ref — 3C-SiC films grown directly on monocrystalline silicon substrates without a buffer layer; S-buf — 3C-SiC films grown on silicon substrates incorporating a porous silicon buffer layer. The dataset includes raw diffraction patterns, processed peak data, and tabulated peak parameters used for quantitative structural analysis. Particular attention is given to the (111) and (220) reflections of 3C-SiC, which are sensitive to residual biaxial stress and crystalline quality. The data support reproducibility of XRD-based structural analysis and may be reused for comparative studies of stress mitigation strategies in semiconductor heterostructures. Methods X-ray diffraction measurements were performed at room temperature using a laboratory powder diffractometer operated in θ–2θ geometry. All samples were measured under identical instrumental conditions to ensure direct comparability between buffered and buffer-free heterostructures. Diffraction patterns were collected over an angular range sufficient to resolve the characteristic reflections of cubic silicon carbide and the silicon substrate. Instrumental broadening was evaluated using a crystalline standard and taken into account during peak analysis. Data processing included background subtraction, peak fitting, and determination of peak positions and full widths at half maximum (FWHM). The extracted parameters were used to assess relative changes in lattice spacing, peak broadening, and microstructural quality between the two sample series. Where applicable, the data were further employed for size–strain analysis using established line-broadening approaches. Detailed growth conditions, full instrumental settings, and extended modeling procedures are intentionally not disclosed at this stage and may be provided in future versions of the dataset upon completion of the associated research project. Content of the dataset The dataset includes: Raw XRD diffraction patterns as acquired from the diffractometer; Processed diffraction data after background correction and peak fitting; Tabulated peak parameters (2θ position, FWHM, interplanar spacing) in open formats; Sample identification table linking diffraction data to sample series (S-ref, S-buf); Derived structural parameters used for comparative analysis of buffered and unbuffered heterostructures.