Local environment of Ga doped vertically aligned wurtzite ZnO nanowires probed by XNLD

Vertically aligned wurtzite ZnO nanowires doped with Ga are investigated by X-ray Natural Linear Dichroism. XNLD measurements performed at the Ga and Zn K-edges will allow us to probe the charge anisotropy of the empty 4p states and with the help of FDMNES simulations to provide information on the local environment surrounding the Ga dopants. Those measurements done on as-grown and post annealed nanowires under oxygen atmosphere will give us a deep insight into the physicochemical processes during the formation of ZnO NWs and the related gallium incorporation mechanisms which will offer a general strategy for their extrinsic doping and open the way for carefully controlling their physical properties as required for nanoscale device engineering.