Data for Kvit, A. V., Yankovich, A. B., Avrutin, V., Liu, H., Izyumskaya, N., Özgür, U., Morkoç, H. & Voyles, P. M. Impurity distribution and microstructure of Ga-doped ZnO films grown by molecu
Report of Electronic Films is currently supplying a comprehensive analysis of many things which are liable for economy growth and factors which could play an important part in the increase of the mark
Figure 6: (a) Characteristic I-V behavior as a function of time with a sweep range between 4 and -4 V of the Al–ZnO(15 min)/ZnO(100 min)/ITO/glass sample (ZA1). (b) Conventional I-V curve (pinched hys
Co-doping with AlN via RF sputtering is necessary since it is still very difficult to create high conductivity p-type zinc oxide (ZnO) thin films. At room temperature, RF sputtering was used with Ar (
