Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 1b Raw Data
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下载链接：
https://www.osti.gov/servlets/purl/1764127/
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资源简介：
Accelerated CA testing on bare epilayer Si/GaN photocathode at constant bias of -0.6 V vs RHE under 3.5 sun illumination for 150 hours in 0.5 M H2SO4 (pH=0.4)
提供机构：
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Lawrence Livermore National Laboratory
(LLNL), Livermore, CA (United States)
创建时间：
2021-02-05
