Physics-based parametrization of the surface impedance for radio frequency sheaths

The accompanying files contain digital data for the figures in the article "Physics-based parametrization of the surface impedance for radio frequency sheaths" by J.R. Myra, Physics of Plasmas 24, 072507 (2017). Filenames correspond to the figures or parts thereof. All data is given as ascii text in csv format. The files may be open and plotted by common spreadsheet programs and may be easily read by procedural programs. The first row gives the column headers. These correspond to the labels on the x and y axes of the figures (as represented by ascii text). Most headers are self-explanatory. Exceptional cases are noted below. Fig. 2 w = frequency omega yir20 = real part of ion impedance Re[yi] for Vrf = 20 yii20 = imaginary part of ion impedance Im[yi] for Vrf = 20 yir10 = real part of ion impedance Re[yi] for Vrf = 10 yii10 = imaginary part of ion impedance Im[yi] for Vrf = 10 yir5 = real part of ion impedance Re[yi] for Vrf = 5 yii5 = imaginary part of ion impedance Im[yi] for Vrf = 5 yir0 = real part of ion impedance Re[yi] for Vrf = 0 yii0 = imaginary part of ion impedance Im[yi] for Vrf = 0 The diagonal blue lines in the published figures for Figs. 3 - 8 indicate the line y = x and are not explicilty tabulated here. Abstract: The properties of sheaths near conducting surfaces are studied for the case where both magnetized plasma and intense radio frequency (rf) waves coexist. The work is motivated primarily by the need to understand, predict and control ion cyclotron range of frequency (ICRF) interactions with tokamak scrape-off layer plasmas, and is expected to be useful in modeling rf sheath interactions in global ICRF codes. Employing a previously developed model for oblique angle magnetized rf sheaths [J. R. Myra and D. A. D’Ippolito, Phys. Plasmas 22, 062507 (2015)], an investigation of the four-dimensional parameter space governing these sheath is carried out. By combining numerical and analytical results, a parametrization of the surface impedance and voltage rectification for rf sheaths in the entire four-dimensional space is obtained.