Dataset Figures 1 to 5 paper entitled "Stoichiometric control of electron mobility and 2D superconductivity at LaAlO3-SrTiO3 interfaces"
收藏DIGITAL.CSIC2025-05-21 更新2026-05-11 收录
下载链接:
https://digital.csic.es/handle/10261/389804
下载链接
链接失效反馈官方服务:
资源简介:
Dataset Description: Stoichiometric Control of Electron Mobility and 2D Superconductivity at LaAlO₃/SrTiO₃ Interfaces The dataset associated with the study "Stoichiometric Control of Electron Mobility and 2D Superconductivity at LaAlO₃/SrTiO₃ Interfaces" addresses a central question in the field of complex oxide interfaces: how precise control of cation stoichiometry in LaAlO₃ thin films affects the electronic properties and superconducting behavior of the two-dimensional electron system (2DES) that emerges at the interface with SrTiO₃. Motivation Interfacial superconductivity at oxide heterostructures such as LaAlO₃/SrTiO₃ (LAO/STO) is a model system to explore emergent quantum phases. However, the interplay between stoichiometry, defect chemistry, and electronic transport remains poorly understood. This work aims to systematically quantify how deviations in La/Al ratio—controlled via laser fluence in pulsed laser deposition—modify electron mobility, carrier density, and superconductivity at the interface. The ability to reproducibly engineer high-mobility interfaces in the clean limit is crucial for future oxide electronics and quantum device applications. Dataset Content and Structure The dataset includes the following categories of data: X-ray Photoelectron Spectroscopy (XPS) – Measurements of the La/Al cation ratio for a series of LAO films grown under different laser energy densities. Transport Measurements – Sheet resistance, Hall effect, and superconducting transition temperatures as a function of stoichiometry and back-gate voltage. STEM-EELS Data – High-resolution scanning transmission electron microscopy images and corresponding elemental maps (La, Al, Ti, O) at the LAO/STO interface. Superconducting Phase Diagrams – Gate-tunable superconducting properties plotted against carrier density and mobility. Band Structure Models – Tight-binding calculations and band-filling analysis used to interpret the transport data near the Lifshitz transition.
创建时间:
2025-05-21



