Plasmons in AlGaN/GaN grating-gate structure probing with 300 K background illumination

This is a set of research data related to the article titled "Plasmons in AlGaN/GaN grating-gate structure probing with 300 K background illumination" AIP Advances 13, 095017 (2023), doi:10.1063/5.0169635. The set contains numerical data used to create the next Figures:Figure 2. Transfer characteristics of the studied AlGaN/GaN grating-gate field effect transistor at different drain voltages in the linear (a) and semi-logarithmic (b) scales at T = 70 K.Figure 4. (a) An example of two closely spaced Lorentzian spectra (red and blue lines) and the difference between them (black line). Dashed lines show the position of minima and maxima of the spectral difference indicating that they do not correspond to the minima of the original spectra. (b) Transmittance spectra measured in the fast-scan mode of FTIR at different gate voltages (shown with offset). The red line shows the difference in spectra at Vg = 0 and Vg = −0.5 V. The dashed line shows the frequency dependence of the plasmon frequency on the gate voltage calculated using Eq. (1). (c) Reflection spectra measured in the step-scan mode showing the effect of modulation of 300 K black-body radiation by plasmons. Spectra are shown with the offset. The first voltage of the square waveform function is fixed at Vg = −3 V, and the second voltage is shown next to the spectra, Vd = 0. (d) Reflection spectra measured in the step-scan mode showing the effect of modulation of 300 K black-body radiation by plasmons at different drain voltages. Spectra are shown with the offset. The first voltage of the square waveform is Vd = 0 V, and the second voltage is shown next to the spectra, Vg = 0.